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Electrical Control of Spin-Injection Using Mixed Dimensional van der Waals Heterostructures
IEEE Transactions on Nanotechnology ( IF 2.1 ) Pub Date : 2020-01-01 , DOI: 10.1109/tnano.2020.3025481
John Eric Tiessen , Junxia Shi

We demonstrate that van der Waals heterostructures based on CrI3, MoS2 and a 3D semiconductor source may allow for all electrical control of spin polarized carrier injection into MoS2. We demonstrate this possibility using a simple resonant tunneling device structure and model it using the transfer matrix method. Our results show that electrically controlled spin polarized carrier injection is theoretically possible at low device bias.

中文翻译:

使用混合维范德华异质结构的自旋注射的电气控制

我们证明了基于 CrI3、MoS2 和 3D 半导体源的范德华异质结构可以允许对自旋极化载流子注入 MoS2 进行所有电气控制。我们使用简单的谐振隧道设备结构证明了这种可能性,并使用传递矩阵方法对其进行建模。我们的结果表明,在低器件偏压下,电控自旋极化载流子注入在理论上是可能的。
更新日期:2020-01-01
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