Development of power electronic converters tend to achieve high efficiency and at the same time high power density in many industrial applications. In recent years, with emerging third-generation semiconductor materials i.e. Silicon Carbide (SiC) and Gallium Nitride (GaN), the switching frequency of several MHz has become a widely studied frequency band, therefore traditional technology can no longer meet the demand, and many new challenges appear. This paper presents a comprehensive review of high frequency (HF) converters, the essential challenges are analyzed such as topology selection, soft-switching technologies, resonant gate drivers, magnetic components design and optimization.

中文翻译：

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高频功率转换器及相关技术综述

功率电子转换器的发展趋向于在许多工业应用中实现高效率并同时实现高功率密度。近年来，随着新兴的第三代半导体材料即碳化硅（SiC）和氮化镓（GaN）的出现，几兆赫兹的开关频率已成为人们广泛研究的频带，因此传统技术已不能满足需求，许多新的挑战出现了。本文对高频（HF）转换器进行了全面回顾，分析了诸如拓扑选择，软开关技术，谐振栅极驱动器，磁性元件设计和优化等基本挑战。