Two low-noise amplifiers fabricated with 100-nm gate length gallium nitride (GaN)-on-silicon process in $W$ -band are presented in this work. One has a gain of 17.5–20.5 dB in 77.5–84 GHz with 3.8–4.7-dB noise figure (NF), the other has wider bandwidth of 78.5–90 GHz with 14.5–17-dB gain and 4.5–5.2-dB NF. The chip sizes of these two low-noise amplifiers (LNAs) are $3\times 1.6$ mm² and $3\times 1.4$ mm² separately. The power dissipation of these two LNAs is about 190 mW. These LNAs can be integrated with high-power GaN power amplifier on the same chip, which avoids the peripheral packaging loss and achieves smaller module size. The universal gate length in commercial process with low-cost silicon substrate brings these LNAs great potential for mass production in future millimeter-wave communications.

中文翻译：

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在 W 波段中使用 100 nm 栅极长度 GaN-on-Silicon 工艺的低噪声放大器

两个低噪声放大器采用 100 nm 栅极长度的氮化镓 (GaN)-on-silicon 工艺制造 $W$ -band 出现在这项工作中。一个在 77.5-84 GHz 的增益为 17.5-20.5 dB，噪声系数 (NF) 为 3.8-4.7-dB，另一个在 78.5-90 GHz 的带宽更宽，增益为 14.5-17-dB 和 4.5-5.2-dB NF . 这两个低噪声放大器 (LNA) 的芯片尺寸为 $3\乘以 1.6$ 毫米²和 $3\乘以 1.4$ 毫米²分开。这两个 LNA 的功耗约为 190 mW。这些LNA可以与大功率GaN功率放大器集成在同一芯片上，避免外围封装损耗，实现更小的模块尺寸。具有低成本硅衬底的商业工艺中的通用栅极长度为这些低噪声放大器带来了在未来毫米波通信中大规模生产的巨大潜力。