This letter presents a negative conductance ( $G_{m}$ )- and swing-enhanced Colpitts voltage-controlled oscillator (VCO) based on optimization of the capacitance ratio. In the proposed VCO structure, a current source typically used in conventional VCOs is replaced with an inductor to increase the output voltage swing. A current-reuse configuration is also adopted to decrease power consumption. Theoretical analyses and simulations show that the devised VCO with an optimized capacitance ratio exhibits enhanced $G_{m}$ and swing when compared to a conventional VCO. Measurements revealed a phase noise of −129.67 dBc/Hz at a 1-MHz offset frequency from the 2.2-GHz carrier, while power consumption was 2.2 mW from a 1.2-V supply voltage. This resulted in a figure-of-merit of −193.1 dBc/Hz. The proposed device was implemented using a 65-nm CMOS process.

中文翻译：

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通过优化电容比来增强 Gₘ 和摆动的 Colpitts VCO

这封信呈现负电导（ $G_{m}$ )- 和基于电容比优化的摆动增强型 Colpitts 压控振荡器 (VCO)。在建议的 VCO 结构中，传统 VCO 中通常使用的电流源被电感器取代，以增加输出电压摆幅。还采用了电流重用配置来降低功耗。理论分析和模拟表明，设计的具有优化电容比的 VCO 表现出增强的 $G_{m}$ 与传统 VCO 相比摆动。测量结果显示，在 2.2 GHz 载波的 1 MHz 偏移频率下，相位噪声为 -129.67 dBc/Hz，而 1.2 V 电源电压下的功耗为 2.2 mW。这导致了 -193.1 dBc/Hz 的品质因数。所提议的设备是使用 65 纳米 CMOS 工艺实现的。