This letter presents new wideband single-pole double-throw (SPDT) RF switches utilizing SiGe heterojunction bipolar transistors (HBTs) for both series and shunt switches. SiGe HBT, when used as a series switch, exhibits small parasitic components compared to bulk CMOS, which improves insertion loss at high frequency and supports wider bandwidth. For a series switch, three configurations are proposed: using the collector as an input (CI), using the emitter as an input (EI), and using a combination of the two in an antiparallel (AP) fashion. While all three configurations exhibit similar performance, the SPDT switch with the EI SiGe HBT exhibits the best insertion loss and isolation achieving dc-to-above 110-GHz bandwidth, 2.5 dB of insertion loss, and 27.3 dB of isolation at 60 GHz. The SPDT switch with AP SiGe HBT pair exhibits the highest linearity, with 15.6 dBm of input 1-dB compression point (IP 1 dB) at 10 GHz. With 0.61 mW of power dissipation, these new SPDT switches using SiGe HBTs exhibit similar performance to silicon-on-insulator (SOI) CMOS while obtaining higher power capability among conventional series-shunt SPDT designs.

中文翻译：

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一种新型宽带、低插入损耗、高线性度 SiGe 射频开关

这封信展示了新型宽带单刀双掷 (SPDT) 射频开关，该开关采用用于串联和并联开关的 SiGe 异质结双极晶体管 (HBT)。SiGe HBT 在用作串联开关时，与体 CMOS 相比具有较小的寄生元件，从而改善了高频插入损耗并支持更宽的带宽。对于串联开关，提出了三种配置：使用集电极作为输入 (CI)，使用发射极作为输入 (EI)，以及以反并联 (AP) 方式使用两者的组合。虽然所有三种配置都表现出相似的性能，但带有 EI SiGe HBT 的 SPDT 开关表现出最佳的插入损耗和隔离度，可实现直流至 110 GHz 以上的带宽、2.5 dB 的插入损耗和 60 GHz 下的 27.3 dB 隔离度。带有 AP SiGe HBT 对的 SPDT 开关表现出最高的线性度，在 10 GHz 时具有 15.6 dBm 的输入 1-dB 压缩点 (IP 1 dB)。凭借 0.61 mW 的功耗，这些使用 SiGe HBT 的新型 SPDT 开关表现出与绝缘体上硅 (SOI) CMOS 相似的性能，同时在传统串联并联 SPDT 设计中获得更高的功率能力。