We analyze the scalability of a spin–orbit torque random access memory (SOT-MRAM)-based physical unclonable function (PUF) at the nanoscale size by means of a hybrid CMOS/spintronics simulation framework. The properties of the SOT-MRAM device (diameters from 100 nm down to 25 nm) are computed via micromagnetic simulations, whereas their implications for PUF applications are evaluated at the circuit level in terms of energy characteristics and security metrics. Obtained results prove that the implementation of 2 b xor operations in the designed PUF circuit achieves randomness and uniqueness very close to the ideality.

中文翻译：

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基于自旋轨道扭矩的缩放对物理不可克隆函数的影响

我们通过混合 CMOS/自旋电子学仿真框架分析了纳米级尺寸的基于自旋轨道扭矩随机存取存储器 (SOT-MRAM) 的物理不可克隆函数 (PUF) 的可扩展性。SOT-MRAM 器件的特性（直径从 100 nm 到 25 nm）是通过微磁模拟计算的，而它们对 PUF 应用的影响是在电路级别根据能量特性和安全指标进行评估的。获得的结果证明，在设计的PUF电路中实现2 b xor运算实现了非常接近理想的随机性和唯一性。