Recently, a few compact logic function realizations such as AND, OR, NAND and NOR have been proposed using double-gate tunnel field-effect transistor (DGTFET) with independent gate-control. In this article, using two-dimensional device simulations, we propose to realize the exclusive-OR (XOR) and exclusive-NOR (XNOR) logic functions. To implement an XOR function, a dual-material DGTFET (DM-DGTFET) is used. The structure is designed such that the band-to-band tunneling (BTBT) occurs at the boundary of these dual-material gates, rather than at the source-channel junction. Further, to realize the XNOR function, the gate-source and the gate-drain overlaps are used. The proposed DGTFET-based logic function implementations are able to modulate the current flow as per the required functionality, achieving an ON-state current by OFF-state current (I ON /I OFF ) ratio of order ~10 9 . Furthermore, it is demonstrated that a CMOS-type XNOR gate can be realized by combining the proposed XNOR and XOR functions in the pull-up and pull-down network, respectively.

中文翻译：

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使用隧道场效应晶体管实现 XOR 和 XNOR 功能


最近，人们提出了使用具有独立栅极控制的双栅极隧道场效应晶体管（DGTFET）来实现一些紧凑的逻辑功能，例如 AND、OR、NAND 和 NOR。在本文中，我们建议使用二维器件模拟来实现异或（XOR）和异或非（XNOR）逻辑功能。为了实现 XOR 功能，使用了双材料 DGTFET (DM-DGTFET)。该结构的设计使得带间隧道效应 (BTBT) 发生在这些双材料栅极的边界处，而不是源极沟道结处。此外，为了实现XNOR功能，使用栅源和栅漏重叠。所提出的基于 DGTFET 的逻辑功能实现能够根据所需的功能来调制电流，从而实现通态电流与断态电流 (I ON /I OFF ) 的比率约为 10 9 。此外，还证明了可以通过分别在上拉和下拉网络中结合所提出的XNOR和XOR功能来实现CMOS型XNOR门。