Poly-Si channels need well passivated by using hydrogen passivation process in 3D NAND flash memories for better poly-Si quality with low trap density. It is believed that Xtacking 3D NAND flash memory has the advantage of flexible arranging the passivation process. In this article, two different passivation locations were compared in Xtacking structure to achieve better trap passivation. An optimized passivation process conducted at wafer backside with passivation SiN as hydrogen diffusion source was found to have an improved trap passivation result. This benefit was attributed to the sufficient H diffusion paths in Xtacking. These results also indicated the advantage of trap passivation for future higher stacked Xtacking 3D NAND flash memory.

中文翻译：

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Xtacking 3D NAND 闪存中多晶硅通道钝化的氢源和扩散路径

多晶硅通道需要通过在 3D NAND 闪存中使用氢钝化工艺进行良好钝化，以获得更好的多晶硅质量和低陷阱密度。相信Xtacking 3D NAND闪存的优势在于可以灵活安排钝化工艺。在本文中，在 Xtacking 结构中比较了两种不同的钝化位置，以实现更好的陷阱钝化。发现在晶片背面使用钝化 SiN 作为氢扩散源进行的优化钝化工艺具有改进的陷阱钝化结果。这种好处归因于 Xtacking 中足够的 H 扩散路径。这些结果还表明陷阱钝化对于未来更高堆叠的 Xtacking 3D NAND 闪存的优势。