A novel insulated gate bipolar transistor (IGBT) using a deep trench filled with SiO2 and high- ${k}$ dielectric film (HKF) is presented. The deep trench with the HKF can provide rapid depletion of the drift region during the turn-off transient, eliminating the tail current and reducing the turn-off loss. According to the simulation results, with a relative permittivity of 475 and a 400 nm thickness for the HKF, the proposed device obtains a 62% reduction in the turn-off loss compared to a conventional field stop IGBT at the same on-state voltage and breakdown voltage. Moreover, compared to an IGBT using a trench filled with HK dielectric, the proposed device is more feasible to be fabricated and has a lower gate-to-anode capacitance, which can reduce the current and voltage oscillations during the turn-off transient.

中文翻译：

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使用深沟槽填充SiO2和高k介电膜的IGBT的研究

介绍了一种使用填充有 SiO2 和高 ${k}$ 介电膜 (HKF) 的深沟槽的新型绝缘栅双极晶体管 (IGBT)。带有 HKF 的深沟槽可以在关断瞬态期间快速耗尽漂移区，消除尾电流并降低关断损耗。根据仿真结果，HKF 的相对介电常数为 475，厚度为 400 nm，在相同的导通电压下，与传统的场截止 IGBT 相比，所提出的器件的关断损耗降低了 62%。击穿电压。此外，与使用填充 HK 电介质的沟槽的 IGBT 相比，所提出的器件更易于制造并且具有更低的栅阳极电容，这可以减少关断瞬态期间的电流和电压振荡。