Indium gallium nitride (InGaN)-based light-emitting diodes (LEDs) are considered a promising candidate for red-green-blue (RGB) micro displays. Currently, the blue and green LEDs are efficient, while the red ones are inefficient for such applications. This paper reports our work of creating efficient InGaN-based orange and red LEDs on silicon(111) substrates at low current density. Based on the structure of InGaN yellow LEDs, by simply reducing the growth temperature of all the yellow quantum wells (QWs), we obtained 599 nm orange LEDs with peak wall-plug efficiency (WPE) of 18.1% at 2 A/cm2. An optimized QW structure was proposed that changed two of the nine yellow QWs to orange ones. Compared with the sample containing nine orange QWs, the sample with two orange QWs and seven yellow QWs showed similar emission spectra but a much higher peak WPE up to 24.0% at 0.8 A/cm2 with a wavelength of 608 nm. The improvement of peak WPE can be attributed to the improved QW quality and the reduced active recombination volume. Subsequently, a series of efficient InGaN-based orange and red LEDs was demonstrated. With further development, the InGaN-based red LEDs are believed to be attainable and can be used in micro LED displays.

中文翻译：

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基于 InGaN 的发光二极管的高效发射：朝向橙色和红色

基于氮化铟镓 (InGaN) 的发光二极管 (LED) 被认为是红绿蓝 (RGB) 微型显示器的有希望的候选者。目前，蓝色和绿色 LED 是高效的，而红色 LED 对此类应用效率低下。本文报告了我们在低电流密度下在硅 (111) 衬底上创建高效的基于 InGaN 的橙色和红色 LED 的工作。基于 InGaN 黄色 LED 的结构，通过简单地降低所有黄色量子阱 (QW) 的生长温度，我们获得了 599 nm 橙色 LED，其峰值壁插效率 (WPE) 在 2 A/cm2 时为 18.1%。提出了一种优化的 QW 结构，将九个黄色 QW 中的两个更改为橙色 QW。与含有 9 个橙色 QW 的样品相比，具有两个橙色 QW 和七个黄色 QW 的样品显示出相似的发射光谱，但在 0.8 A/cm2 下具有更高的峰值 WPE，高达 24.0%，波长为 608 nm。峰值 WPE 的改善可归因于 QW 质量的改善和活性重组量的减少。随后，展示了一系列高效的基于 InGaN 的橙色和红色 LED。随着进一步的发展，人们相信基于 InGaN 的红色 LED 是可以实现的，并且可以用于微型 LED 显示器。