We have examined the influence of electron irradiation and rapid thermal annealing on photoluminescence emission from GaAsNBi alloys. Electron irradiation of a 1-eV compressively strained GaNAsBi-on-GaAs epilayer, grown by molecular beam epitaxy and subsequently rapidly thermally annealed, is found to induce much stronger photoluminescence than what is observed for an identical as-grown sample upon annealing. At the same time, annealing of the irradiated sample caused a negligible spectral blueshift and reduced alloy potential energy fluctuations. These irradiation-related phenomena occurred without a change in the alloy macroscopic composition as revealed by x-ray diffraction and are mainly related to the nitrogen incorporated into non-substitutional sites in the quaternary alloy.

中文翻译：

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电子辐照和快速热退火对 GaAsNBi 合金光致发光的影响

我们已经研究了电子辐射和快速热退火对 GaAsNBi 合金光致发光发射的影响。发现通过分子束外延生长并随后快速热退火的 1-eV 压缩应变 GaNAsBi-on-GaAs 外延层的电子辐照诱导比退火时观察到的相同生长样品强得多的光致发光。同时，辐照样品的退火引起可忽略不计的光谱蓝移并降低合金势能波动。这些与辐照相关的现象发生时，合金宏观成分没有变化，如 X 射线衍射所揭示的那样，主要与四元合金中非取代位点中的氮有关。