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Structural and Dielectric Properties of Ba1−xLax(Zn1/3Nb2/3)O3 Solid Solutions
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-10-10 , DOI: 10.1002/pssb.202000419 A. F. Qasrawi 1, 2 , Ethem İlhan Sahin 3 , Tamara Y. Abed 1 , Mehriban Emek 4
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-10-10 , DOI: 10.1002/pssb.202000419 A. F. Qasrawi 1, 2 , Ethem İlhan Sahin 3 , Tamara Y. Abed 1 , Mehriban Emek 4
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Herein, lanthanum doping effects on the structural, dielectric, and electrical properties of Ba1−xLax(Zn1/3Nb2/3)O3 (BZN) solid solutions are focused upon. The La contents which are varied in the range of 0.02–0.20 exhibit a solubility limit of x = 0.02. Although minor phases of Ba5Nb4O15 and Ba3LaNb3O12 appear for samples doped with La contents of x = 0.05 and x = 0.10, they play no remarkable role for the enhanced structural and dielectric properties of BZN. The La doping content of x = 0.02 succeeds in increasing the crystallite size by 51.16% and lowering the microstrain by 34.18% and defect concentration by 63.10%. La‐doped BZN ceramics display higher values of relative density and electrical conductivity. The analyses of the dielectric spectra as a function of temperature display dielectric relaxation behavior above 120 °C. In the temperature range of 20–120 °C, La doping changes the temperature coefficient of dielectric constants from +30 ppm °C−1 in pure samples to −341 ppm °C−1 in samples doped with La contents of x = 0.10. The enhancements in structural parameters, density values, and dielectric responses that are achieved via La doping make BZN ceramics more suitable for electronic device fabrication.
中文翻译：
Ba1-xLax（Zn1 / 3Nb2 / 3）O3固溶体的结构和介电性能
在此，镧掺杂对Ba 1- x La x（Zn 1/3 Nb 2/3）O 3（BZN）固溶体的结构，介电和电学性质的影响被关注。La含量在0.02-0.20范围内变化，其溶解度极限为x = 0.02。尽管掺杂有La的x = 0.05和x的样品出现了Ba 5 Nb 4 O 15和Ba 3 LaNb 3 O 12的次要相。 = 0.10时，它们对增强BZN的结构和介电性能没有显著作用。x = 0.02的La掺杂含量成功地使微晶尺寸增加了51.16％，微应变降低了34.18％，缺陷浓度降低了63.10％。掺La的BZN陶瓷显示出较高的相对密度和电导率值。介电谱随温度变化的分析显示出120°C以上的介电弛豫行为。在20–120°C的温度范围内，La掺杂将介电常数的温度系数从纯样品中的+30 ppm°C -1变为掺杂有x的La含量的样品中的-341 ppm°C -1 = 0.10。通过La掺杂实现的结构参数，密度值和介电响应的增强，使得BZN陶瓷更适合于电子设备的制造。
更新日期：2020-10-10
中文翻译：
Ba1-xLax（Zn1 / 3Nb2 / 3）O3固溶体的结构和介电性能
在此，镧掺杂对Ba 1- x La x（Zn 1/3 Nb 2/3）O 3（BZN）固溶体的结构，介电和电学性质的影响被关注。La含量在0.02-0.20范围内变化，其溶解度极限为x = 0.02。尽管掺杂有La的x = 0.05和x的样品出现了Ba 5 Nb 4 O 15和Ba 3 LaNb 3 O 12的次要相。 = 0.10时，它们对增强BZN的结构和介电性能没有显著作用。x = 0.02的La掺杂含量成功地使微晶尺寸增加了51.16％，微应变降低了34.18％，缺陷浓度降低了63.10％。掺La的BZN陶瓷显示出较高的相对密度和电导率值。介电谱随温度变化的分析显示出120°C以上的介电弛豫行为。在20–120°C的温度范围内，La掺杂将介电常数的温度系数从纯样品中的+30 ppm°C -1变为掺杂有x的La含量的样品中的-341 ppm°C -1 = 0.10。通过La掺杂实现的结构参数，密度值和介电响应的增强，使得BZN陶瓷更适合于电子设备的制造。
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