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Promoting Ge Alloying Reaction via Heterostructure Engineering for High Efficient and Ultra‐Stable Sodium‐Ion Storage
Advanced Science ( IF 14.3 ) Pub Date : 2020-10-08 , DOI: 10.1002/advs.202002358 Chaoqun Shang 1 , Le Hu 1 , Dan Luo 2 , Krzysztof Kempa 1, 3, 4 , Yongguang Zhang 3 , Guofu Zhou 1, 3 , Xin Wang 1, 3 , Zhongwei Chen 2
Advanced Science ( IF 14.3 ) Pub Date : 2020-10-08 , DOI: 10.1002/advs.202002358 Chaoqun Shang 1 , Le Hu 1 , Dan Luo 2 , Krzysztof Kempa 1, 3, 4 , Yongguang Zhang 3 , Guofu Zhou 1, 3 , Xin Wang 1, 3 , Zhongwei Chen 2
Affiliation
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Germanium (Ge)‐based materials have been considered as potential anode materials for sodium‐ion batteries owing to their high theoretical specific capacity. However, the poor conductivity and Na+ diffusivity of Ge‐based materials result in retardant ion/electron transportation and insufficient sodium storage efficiency, leading to sluggish reaction kinetics. To intrinsically maximize the sodium storage capability of Ge, the nitrogen doped carbon‐coated Cu3Ge/Ge heterostructure material (Cu3Ge/Ge@N‐C) is developed for enhanced sodium storage. The pod‐like structure of Cu3Ge/Ge@N‐C exposes numerous active surface to shorten ion transportation pathway while the uniform encapsulation of carbon shell improves the electron transportation, leading to enhanced reaction kinetics. Theoretical calculation reveals that Cu3Ge/Ge heterostructure can offer decent electron conduction and lower the Na+ diffusion barrier, which further promotes Ge alloying reaction and improves its sodium storage capability close to its theoretical value. In addition, the uniform encapsulation of nitrogen‐doped carbon on Cu3Ge/Ge heterostructure material efficiently alleviates its volume expansion and prevents its decomposition, further ensuring its structural integrity upon cycling. Attributed to these unique superiorities, the as‐prepared Cu3Ge/Ge@N‐C electrode demonstrates admirable discharge capacity, outstanding rate capability and prolonged cycle lifespan (178 mAh g−1 at 4.0 A g−1 after 4000 cycles).
中文翻译：
通过异质结构工程促进Ge合金化反应以实现高效和超稳定的钠离子存储
锗（Ge）基材料由于其高理论比容量而被认为是钠离子电池的潜在负极材料。然而，Ge基材料的导电性和Na +扩散性较差，导致离子/电子传输延迟和钠存储效率不足，导致反应动力学缓慢。为了本质上最大化Ge的钠存储能力，开发了氮掺杂碳包覆的Cu 3 Ge/Ge异质结构材料（Cu 3 Ge/Ge@N-C）来增强钠存储。Cu 3 Ge/Ge@N-C的豆荚状结构暴露出许多活性表面，缩短了离子传输路径，而碳壳的均匀封装改善了电子传输，从而增强了反应动力学。理论计算表明，Cu 3 Ge/Ge异质结构具有良好的电子传导能力，降低了Na +扩散势垒，进一步促进了Ge合金化反应，使其储钠能力接近理论值。此外，氮掺杂碳在Cu 3 Ge/Ge异质结构材料上的均匀封装有效地减轻了其体积膨胀并防止其分解，进一步确保了其在循环时的结构完整性。由于这些独特的优势，所制备的Cu 3 Ge/Ge@N-C电极表现出令人惊叹的放电容量、出色的倍率性能和较长的循环寿命（ 4000次循环后在4.0 A g -1下为178 mAh g -1）。
更新日期：2020-11-19
中文翻译：
通过异质结构工程促进Ge合金化反应以实现高效和超稳定的钠离子存储
锗（Ge）基材料由于其高理论比容量而被认为是钠离子电池的潜在负极材料。然而，Ge基材料的导电性和Na +扩散性较差，导致离子/电子传输延迟和钠存储效率不足，导致反应动力学缓慢。为了本质上最大化Ge的钠存储能力，开发了氮掺杂碳包覆的Cu 3 Ge/Ge异质结构材料（Cu 3 Ge/Ge@N-C）来增强钠存储。Cu 3 Ge/Ge@N-C的豆荚状结构暴露出许多活性表面，缩短了离子传输路径，而碳壳的均匀封装改善了电子传输，从而增强了反应动力学。理论计算表明，Cu 3 Ge/Ge异质结构具有良好的电子传导能力，降低了Na +扩散势垒，进一步促进了Ge合金化反应，使其储钠能力接近理论值。此外，氮掺杂碳在Cu 3 Ge/Ge异质结构材料上的均匀封装有效地减轻了其体积膨胀并防止其分解，进一步确保了其在循环时的结构完整性。由于这些独特的优势，所制备的Cu 3 Ge/Ge@N-C电极表现出令人惊叹的放电容量、出色的倍率性能和较长的循环寿命（ 4000次循环后在4.0 A g -1下为178 mAh g -1）。
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