High‐Uniformity Threshold Switching HfO2‐Based Selectors with Patterned Ag Nanodots,Advanced Science

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High‐Uniformity Threshold Switching HfO2‐Based Selectors with Patterned Ag Nanodots
Advanced Science ( IF 14.3 ) Pub Date : 2020-10-08 , DOI: 10.1002/advs.202002251
Yujia Li _{1,

2} , Jianshi Tang _{1,

3} , Bin Gao _{1,

3} , Wen Sun ₁ , Qilin Hua ₁ , Wenbin Zhang ₁ , Xinyi Li ₁ , Wanrong Zhang ₂ , He Qian _{1,

3} , Huaqiang Wu _{1,

3}

Affiliation

High‐performance selector devices are essential for emerging nonvolatile memories to implement high‐density memory storage and large‐scale neuromorphic computing. Device uniformity is one of the key challenges which limit the practical applications of threshold switching selectors. Here, high‐uniformity threshold switching HfO₂‐based selectors are fabricated by using e‐beam lithography to pattern controllable Ag nanodots (NDs) with high order and uniform size in the cross‐point region. The selectors exhibit excellent bidirectional threshold switching performance, including low leakage current (<1 pA), high on/off ratio (>10⁸), high endurance (>10⁸ cycles), and fast switching speed (≈75 ns). The patterned Ag NDs in the selector help control the number of Ag atoms diffusing into HfO₂ and confine the positions to form reproducible filaments. According to the statistical analysis, the Ag NDs selectors show much smaller cycle‐to‐cycle and device‐to‐device variations (C_V < 10%) compared to control samples with nonpatterned Ag thin film. Furthermore, when integrating the Ag NDs selector with resistive switching memory in one‐selector‐one‐resistor (1S1R) structure, the reduced selector variation helps significantly reduce the bit error rate in 1S1R crossbar array. The high‐uniformity Ag NDs selectors offer great potential in the fabrication of large‐scale 1S1R crossbar arrays for future memory and neuromorphic computing applications.

中文翻译：

具有图案化银纳米点的基于 HfO2 的高均匀阈值切换选择器

高性能选择器器件对于新兴的非易失性存储器实现高密度存储器存储和大规模神经形态计算至关重要。器件一致性是限制阈值切换选择器实际应用的关键挑战之一。在这里，通过使用电子束光刻技术在交叉点区域中形成具有高阶和均匀尺寸的可控银纳米点（ND）图案，制造了基于HfO ₂的高均匀性阈值切换选择器。该选择器具有出色的双向阈值开关性能，包括低漏电流（<1 pA）、高开/关比（>10 ⁸）、高耐用性（>10 ⁸周期）和快速开关速度（≈75 ns）。_{选择器中的图案化Ag ND有助于控制扩散到HfO 2}中的Ag原子数量并限制位置以形成可再现的细丝。根据统计分析，与非图案化银薄膜的对照样品相比，Ag ND 选择器显示出更小的周期间变化和器件间变化 ( CV _{< 10%)。}此外，当将 Ag ND 选择器与电阻开关存储器集成在单选择器一电阻器 (1S1R) 结构中时，选择器变化的减少有助于显着降低 1S1R 交叉阵列中的误码率。高均匀性 Ag ND 选择器在制造用于未来内存和神经形态计算应用的大规模 1S1R 交叉阵列方面具有巨大潜力。

更新日期：2020-11-19

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