Abstract The primary objective in this work was to characterize the microstructure, metallurgical reactions, and mechanical properties of joints between oxygen-free Al2O3 ceramic and pure Cu substrates following diffusion bonding at temperatures of 250, 300, or 350°C using a metallization interlayer of Ti-0.8La (wt.%). Diffusion bonding of oxygen-free Al2O3 ceramic and pure Cu substrates was performed using vacuum hot-press diffusion. The joints to be bonded were prepared by applying a pre-metallization interlayer of Ti-0.8La (wt.%). Experiment results demonstrated the successful diffusion bonding of oxygen-free Al2O3 ceramic and pure Cu substrates at temperatures of 350°C. During the process of bonding, the Ti and La diffused toward the Al2O3 substrate to produce a homogeneous diffusion zone with no defects (i.e., cracking or porosity) at the interface. Adding a small quantity of La significantly increased the hardness of the joints as a function of bonding temperature. No indentation cracking was observed at the interface. At an elevated bonding temperature, the inclusion of La reduced the activation energy required for element diffusion, thereby increasing bonding strength in the interfacial diffusion zone and improving the ductility of Al2O3.

中文翻译：

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通过在 Ti 预金属化夹层中加入 0.8 La (wt.%) 促进无氧 Al2O3 陶瓷和纯 Cu 之间的低温扩散结合：微观结构演变、冶金反应和机械性能

摘要 本工作的主要目的是表征无氧 Al2O3 陶瓷和纯铜基板在 250、300 或 350°C 温度下使用金属化夹层扩散结合后接头的微观结构、冶金反应和机械性能。 Ti-0.8La (wt.%)。使用真空热压扩散进行无氧 Al2O3 陶瓷和纯铜基板的扩散键合。通过应用 Ti-0.8La (wt.%) 的预金属化夹层来制备要接合的接头。实验结果表明，无氧 Al2O3 陶瓷和纯铜基板在 350°C 的温度下成功扩散结合。在键合过程中，Ti 和 La 向 Al2O3 基体扩散，形成一个没有缺陷的均匀扩散区（即，开裂或孔隙）在界面。添加少量 La 会显着增加接头的硬度，这是结合温度的函数。界面处未观察到压痕裂纹。在升高的键合温度下，La 的加入降低了元素扩散所需的活化能，从而提高了界面扩散区的键合强度并提高了 Al2O3 的延展性。