Abstract In this study we report the temperature- and power-dependence of the out-of-plane A 1 g Raman mode of mechanically exfoliated few-layered WSe 2 suspended on Si 3 N 4 holes. The A 1 g phonon frequency is red-shifted for a temperature in the range 77-548 K, with first-order temperature coefficients estimated to be -0.0083 and -0.0079 cm − 1 /K for suspended four- and six-layer WSe 2 , respectively. The power-dependence of suspended four-layer WSe 2 sample is estimated to be -0.0079 cm − 1 / μ W and no shift is observed for six-layer WSe 2 . By using the power-dependence of the suspended four layers WSe 2 and the 1D Balandin's approach, we calculate the in-plane thermal conductivity of WSe 2 at room temperature to be ∼ 57.7 W/m.K.

中文翻译：

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悬浮的几层二硒化钨的温度和功率相关声子特性

摘要 在这项研究中，我们报告了悬浮在 Si 3 N 4 孔上的机械剥离的少层 WSe 2 的面外 A 1 g 拉曼模式的温度和功率依赖性。对于 77-548 K 范围内的温度，A 1 g 声子频率发生红移，悬浮四层和六层 WSe 2 的一阶温度系数估计为 -0.0083 和 -0.0079 cm - 1 /K ， 分别。悬浮的四层WSe 2 样品的功率依赖性估计为-0.0079 cm - 1 / μ W，并且对于六层WSe 2 没有观察到偏移。通过使用悬浮的四层 WSe 2 的功率依赖性和一维巴兰丁方法，我们计算出 WSe 2 在室温下的面内热导率为 ~ 57.7 W/mK