Abstract Herein, Sb2Se3-related thin films were prepared by thermal evaporation at room-temperature and post annealing at high temperature. The Sb2Se3 film performance was studied as a function of annealing atmosphere: an inert Ar atmosphere, a H2S-containing atmosphere or a H2Se-containing atmosphere. The phase structure and microscopic morphology were investigated as a function of temperature and annealing atmosphere. The results show that all films possess the orthorhombic Sb2Se3 phase regardless of the annealing atmosphere. Furthermore, the preferred epitaxial growth of the films annealed under the H2S-containing and H2Se-containing atmospheres is along the (020) and (120) planes; while the preferred epitaxial growth of the films annealed under an inert Ar atmosphere is along the (211) and (221) planes. When subjecting the films to annealing temperatures >450 °C, the film thickness was observed to reduce when annealing under Ar and H2Se-containing atmospheres, which may be ascribed to the volatilization of the films at high temperatures.

中文翻译：

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通过热蒸发和后退火制备的 Sb2Se3 薄膜

摘要 在此，通过室温热蒸发和高温后退火制备了 Sb2Se3 相关薄膜。Sb2Se3 薄膜性能作为退火气氛的函数进行研究：惰性 Ar 气氛、含 H2S 的气氛或含 H2Se 的气氛。研究了作为温度和退火气氛的函数的相结构和微观形貌。结果表明，无论退火气氛如何，所有薄膜都具有斜方 Sb2Se3 相。此外，在含H2S和含H2Se气氛下退火的薄膜的优选外延生长沿(020)和(120)面；而在惰性 Ar 气氛下退火的薄膜的优选外延生长是沿着 (211) 和 (221) 平面。