Abstract When being integrated in the fabrication processes of conventional silicon devices, hafnium oxide (HfO2) based films are routinely grown directly on the bare Si, thus causing an unavoidable SiO2 layer at the HfO2/Si interface. In this work, yttrium doped hafnium oxide (Y:HfO2) films were prepared on Si via reactive magnetron co-sputtering. The high-resolution transmission electron microscopy investigation presents a SiO2 layer formed at Y:HfO2/Si interface. The effects of SiO2 interlayer on the properties of Y:HfO2 metal insulator semiconductor (MIS) capacitors are studied in detail in terms of electric field, leakage current and polarization behaviors. After being prepared at the optimized thickness of SiO2, the ferroelectric property of Y:HfO2 capacitor is obtained successfully.

中文翻译：

---

调整 SiO2 夹层厚度对观察硅上掺钇 HfO2 薄膜铁电特性的重要性

摘要 当集成到传统硅器件的制造过程中时，氧化铪 (HfO2) 基薄膜通常直接生长在裸硅上，从而在 HfO2/Si 界面上形成不可避免的 SiO2 层。在这项工作中，通过反应磁控共溅射在 Si 上制备了掺钇的氧化铪 (Y:HfO2) 薄膜。高分辨率透射电子显微镜研究表明在 Y:HfO2/Si 界面上形成了 SiO2 层。从电场、漏电流和极化行为方面详细研究了 SiO2 夹层对 Y:HfO2 金属绝缘体半导体 (MIS) 电容器性能的影响。以优化的SiO2厚度制备后，成功获得了Y:HfO2电容器的铁电性能。