We study the electronic properties of multilayer armchair phosphorene nanoribbons (APNRs) modulated by certain strains. The band structure is calculated by solving the corresponding differential Schrödinger equation, and the density of states (DOS) is obtained combining the Green's function method. It is found that the certain strain has similar effects on different layer APNRs. The vertical tensile strain along the z-direction, the compressive uniaxial strain along the y-direction and biaxial strain along the xy-direction can close the band gap. The gap disappears and some peaks appear around at the energy position of the band gap closure for the corresponding DOS. Further, it is shown that the band gaps depend linearly on the strain for all APNRs. However, the band structure and DOS for four layer APNR are most sensitive to the strains among all APNRs. Both the band gap and DOS variations with the strain show an insulator-metal transition induced by the strain for APNRs. Our results show that the four layer APNR are most suitable for the usage of electromechanical field effect transistors or detectors for detecting the strains.

我们研究了由某些菌株调节的多层扶手椅磷光纳米带（APNR）的电子性能。通过求解相应的微分薛定ding方程来计算能带结构，并结合格林函数方法获得状态密度（DOS）。发现该特定应变对不同层的APNR具有相似的作用。沿垂直拉伸应变Ž -方向，沿所述压缩单轴应变ÿ -方向和双轴应变沿着XY-方向可以缩小带隙。间隙消失，并且在相应的DOS的带隙闭合的能量位置周围出现一些峰。此外，显示出带隙对于所有APNRs线性依赖于应变。但是，四层APNR的能带结构和DOS对所有APNR中的应变最敏感。带隙和DOS随应变的变化都显示了APNR的应变引起的绝缘体-金属跃迁。我们的结果表明，四层APNR最适合用于机电场效应晶体管或用于检测应变的检测器。