The rate of energy loss of the non-equilibrium electrons and their non-ohmic mobility characteristics have been analyzed here for a degenerate ensemble of two dimensional electron gas in a well of compound semiconductor, taking due account of some of the low temperature features. In place of the Fermi Dirac distribution function, a well-tested alternative form of the distribution function has been used here for mathematical simplicity. The numerical results thus obtained here for the wells of InSb, GaAs and GaN are compared with some available theoretical and experimental data. Our theoretical results are seen to be in quite reasonable agreement with the experimental data when some qualitative comparison is made between them. The results being interesting, the present work stimulates further studies in the same field.

由于某些低温特性，在这里分析了化合物半导体阱中二维电子气的简并集合，分析了非平衡电子的能量损失率及其非欧姆迁移率特性。为了简化数学，此处使用了经过测试的分布函数替代形式来代替费米·狄拉克分布函数。因此将此处获得的InSb，GaAs和GaN阱的数值结果与一些可用的理论和实验数据进行了比较。当我们之间的定性比较时，我们的理论结果被认为与实验数据非常合理。结果很有趣，目前的工作激发了在同一领域的进一步研究。