Abstract Dynamic avalanche effect can occur due to the influence of free carrier on electric filed during inductive turn-off of IGBT, which is a critical factor influencing the device reliability. In this paper, a one-dimensional (1-D) analytical model for dynamic avalanche onset is at first derived based on the basic principles of semiconductor and it gives insight into the details of internal physical mechanisms of the device at the onset of dynamic avalanche. Then the critical structural parameters affecting the onset of dynamic avalanche are examined. By introducing a modification factor K into the 1-D model, a rough two-dimensional (2-D) analytical model that can reflect nonuniformity of the current distribution qualitatively during the turn-off of planar IGBTs is eventually obtained.

中文翻译：

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平面 IGBT 动态雪崩开始的分析模型

摘要 IGBT感性关断过程中，自由载流子对电场的影响会产生动态雪崩效应，是影响器件可靠性的关键因素。在本文中，首先基于半导体的基本原理推导了动态雪崩开始的一维（1-D）分析模型，它可以深入了解动态雪崩开始时器件的内部物理机制的细节. 然后检查影响动态雪崩开始的关键结构参数。通过在1-D模型中引入修正因子K，最终得到一个粗略的二维（2-D）解析模型，可以定性地反映平面IGBT关断过程中电流分布的不均匀性。