Among the various devices being researched as possible alternative for conventional scaled down transistor, the spin-FET (Datta-Das transistor) held some early promise. Various research groups have proposed the complementary spin-FETs viz., parallel and anti-parallel spin-FETs, later designed some basic and higher order logic circuits using them, and compared the performance with the conventional CMOS design. Various bulk materials like InAs, InAlAs etc. and 2D materials like graphene, silicene etc. have been used as channel materials in spin-FETs by many researchers. Different ferromagnetic and half-metallic electrodes like cobalt, nickel, CrO₂ have also been employed in the spin-FETs. Several research groups have worked on the usage of multi-gate and multifunctional logic using spin-FET devices. In this paper, a review of the development of spin-FETs and spin-FET based design has been performed. In addition, the various applications of spin-FETs and the challenges faced for the implementation of spin-FETs are highlighted in the paper.

在研究各种可以替代传统按比例缩小晶体管的器件中，自旋FET（Datta-Das晶体管）具有较早的发展前景。各个研究小组提出了互补自旋FET，即并联和反并联自旋FET，后来使用它们设计了一些基本和高阶逻辑电路，并将性能与常规CMOS设计进行了比较。许多研究人员已将各种块状材料（如InAs，InAlAs等）和2D材料（如石墨烯，硅烯等）用作自旋FET中的沟道材料。不同的铁磁和半金属电极，如钴，镍，CrO ₂自旋FET也已采用。几个研究小组已经研究了使用自旋FET器件的多门和多功能逻辑的使用。在本文中，对自旋FET的发展和基于自旋FET的设计进行了回顾。此外，本文重点介绍了自旋FET的各种应用以及实现自旋FET所面临的挑战。