Abstract The two dimensional electron gas (2DEG) exhibits a considerable potential in all-oxide electronics due to the emergence of novel physical phenomena at the typical LaAlO3/SrTiO3 (LAO/STO) heterointerfaces. However, the quality and property of 2DEG are distinctly influenced by the preparation method. Herein, we compare the pulsed laser deposition (PLD) and spin coating method by obtaining high-quality 2DEGs. The comparative studies show that all the LAO/STO heterointerfaces exhibit a perfect metallic conductive behavior under the similar thickness. Moreover, the results by SC exhibit smaller sheet resistance and higher mobility, which is attributed to fewer defect states at heterointerfaces because the chemical method can effectively avoid the ablation of high-energy plume in PLD process. Therefore, our works provide a promising fabrication method for oxide heterointerfaces with a convenient, gentle, large scale and low cost, expanding the way for the application of all-oxide electronic devices.

中文翻译：

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旋涂法和脉冲激光沉积法生长的 LaAlO3/SrTiO3 异质界面的比较

摘要 由于在典型的 LaAlO3/SrTiO3 (LAO/STO) 异质界面上出现了新的物理现象，二维电子气 (2DEG) 在全氧化物电子学中表现出相当大的潜力。然而，2DEG 的质量和性能明显受制备方法的影响。在这里，我们通过获得高质量的 2DEG 来比较脉冲激光沉积 (PLD) 和旋涂方法。对比研究表明，所有 LAO/STO 异质界面在相似厚度下都表现出完美的金属导电行为。此外，SC 的结果表现出更小的薄层电阻和更高的迁移率，这归因于异质界面处的缺陷态更少，因为化学方法可以有效避免 PLD 工艺中高能羽流的烧蚀。所以，