Abstract In this paper, we report stable polarization switching in metal-HfZrOx (HZO)-metal capacitors when pulses are repeatedly applied from the initial state. By examining various process parameters including annealing method, annealing temperature, and annealing time, we investigated the optimal conditions for realizing ferroelectricity in HZO layers deposited by sputtering systems. More specifically, we examined how polarization behaviors evolved as a function of annealing temperatures. Our results showed that annealing HZO capped by a top electrode, when annealing temperature was higher than 850 °C, drives the transformation to large quantities of orthorhombic phases, and enables constant remnant polarization without the fluctuations caused by wake-up and fatigue. We continued to observe stable polarization up to 108 cycles with a pulse width of 5 μs.

中文翻译：

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优化退火条件以增强非易失性存储器应用中溅射 HfZrOx 层的极化稳定性

摘要 在本文中，我们报告了从初始状态重复施加脉冲时金属-HfZrOx (HZO)-金属电容器的稳定极化切换。通过检查包括退火方法、退火温度和退火时间在内的各种工艺参数，我们研究了在溅射系统沉积的 HZO 层中实现铁电性的最佳条件。更具体地说，我们研究了极化行为如何随着退火温度的变化而演变。我们的结果表明，当退火温度高于 850 °C 时，由顶部电极覆盖的退火 HZO 会驱动向大量正交相的转变，并且能够实现恒定的残余极化，而不会因唤醒和疲劳引起的波动。