Abstract

The relaxation times of the lower p states of the arsenic donor in a germanium crystal strained along the [111] crystallographic direction are studied. Measurements are performed by the pump–probe method, using free-electron laser radiation. The states are excited from the 1s (Γ₁) ground state. The experimentally measured decay times of the 2p₀, 3p₀, and 2p_± states are 1.3, no more than 0.2, and 0.4 ns, respectively. It is shown that the relatively high relaxation rate of the 2p_± state is defined by the interaction with intravalley TA photons.

中文翻译：

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应变锗中砷激发态的弛豫

摘要

研究了沿[111]晶体学方向应变的锗晶体中砷供体的较低p态的弛豫时间。使用泵浦探针法，使用自由电子激光辐射进行测量。状态是从1激发小号（Γ ₁）基态。的2的实验测得的衰减时间p ₀，3 p ₀，和2 p _±状态分别是1.3，不大于0.2，和0.4纳秒。结果表明，2p _±态的相对较高的弛豫速率是由与谷内TA光子的相互作用所决定的。