Abstract

Specific features of the current processes in silicon heterojunction with intrinsic thin layer solar cells have been investigated. The proposed model takes into account the ambipolar motion of carriers and allows one to calculate the operating characteristics at an arbitrary ratio of the diffusion length and the crystalline-substrate thickness. A numerical method for estimating the recombination-loss rate on silicon wafer surfaces based on the comparative analysis of the experimental values of short-circuit current and open-circuit voltage is described.

中文翻译：

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具有晶体衬底任意参数的硅异质结太阳能电池工作特性的计算方法

摘要

已经研究了具有本征薄层太阳能电池的硅异质结中当前工艺的特定特征。提出的模型考虑了载流子的双极运动，并允许以载流子的扩散长度和晶体衬底厚度的任意比率来计算工作特性。描述了一种基于对短路电流和开路电压的实验值的比较分析来估算硅晶片表面复合损耗率的数值方法。