Abstract

Single-electron transport in a planar structure of InSb, PbS, and CdSe semiconductor colloidal quantum dots has been studied by scanning tunneling microscopy. Current dips similar to the Coulomb gap have been observed in the I–V characteristics. The qualitative and numerical comparative estimates suggest that a structure consisting of a set of quantum dots exhibits single-electron transport and a phenomenon similar to the Coulomb blockade. The white light illumination of the sample during the measurements of the I–V characteristics breaks the Coulomb blockade and one can expect that a device element based on such a structure will respond to individual photons. In the Coulomb gap region, current oscillations at terahertz frequencies can occur.

中文翻译：

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窄间隙半导体的胶体量子点中的单电子传输。

摘要

通过扫描隧道显微镜研究了InSb，PbS和CdSe半导体胶体量子点在平面结构中的单电子传输。I – V特性中观察到了类似于库仑间隙的电流骤降。定性和数值比较估计表明，由一组量子点组成的结构表现出单电子传输和类似于库仑阻塞的现象。I – V测量期间样品的白光照明这些特性打破了库仑的封锁，人们可以期望基于这种结构的设备元件将对单个光子作出响应。在库仑间隙区域中，可能会发生太赫兹频率的电流振荡。