Al/p-CIAS Schottky diodes were fabricated by depositing aluminium (Al) on different flash evaporated copper–indium–aluminium–diselenide (CIAS) films of varying thickness. Further, all diodes were annealed at 573 K for an hour. The influence of p-CIAS film thickness and the thermal annealing of Al/p-CIAS Schottky diode were investigated by observing current–voltage ( I – V ) and capacitance–voltage ( C – V ) characteristics at room temperature. Various diode parameters, such as ideality factor ( η ), barrier height ( ϕ bo ) and series resistance ( R s ) were calculated using Cheung’s and Norde methods. ϕ bo found to increase with annealing as well as with increase in the film thickness. However, the value of η and R s decreases with annealing and CIAS thickness. The effective density of states ( N v ), acceptor density of states ( N A ) and barrier height have been calculated from C – V measurements. Values obtained from CV analysis were well matched with I – V results. The value of N v decreases and the value of N A increases with the increase in the film thickness. Using I–V and C–V parameters, energy band gap for the prepared Al/p-CIAS diodes has been reconstructed.

中文翻译：

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CuIn1−xAlxSe2 (CIAS) 薄膜厚度和二极管退火温度对 Al/p-CIAS 肖特基二极管的影响

通过在不同厚度的不同闪蒸铜-铟-铝-二硒化物 (CIAS) 薄膜上沉积铝 (Al) 来制造 Al/p-CIAS 肖特基二极管。此外，所有二极管均在 573 K 下退火一小时。通过观察室温下的电流 - 电压（ I - V ）和电容 - 电压（ C - V ）特性，研究了 p-CIAS 膜厚度和 Al/p-CIAS 肖特基二极管的热退火的影响。各种二极管参数，例如理想因子 ( η )、势垒高度 ( ϕ bo ) 和串联电阻 ( R s ) 均使用 Cheung 和 Norde 方法计算。φ bo 发现随着退火以及薄膜厚度的增加而增加。然而，η 和 R s 的值随着退火和 CIAS 厚度而降低。有效态密度 ( N v )，受主状态密度 (NA) 和势垒高度已根据 C-V 测量值计算得出。从 CV 分析获得的值与 I-V 结果很好地匹配。随着膜厚的增加，N v 的值减小，NA 的值增大。使用 I-V 和 C-V 参数，重建了制备的 Al/p-CIAS 二极管的能带隙。