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Analytical model of 2D electric potential and current transfer in superconducting tapes with a current flow diverter architecture
Superconductor Science and Technology ( IF 3.7 ) Pub Date : 2020-10-07 , DOI: 10.1088/1361-6668/aba543
Jean-Hughes Fournier-Lupien , Patrick Del Vecchio , Christian Lacroix , Frédéric Sirois

This work presents a generalization of the concept of current transfer length (CTL) between the stabilizer and the superconducting layer of high temperature superconductor (HTS) coated conductor tapes with a current flow diverter (CFD) architecture. The CFD architecture consists in a non-uniform interfacial resistance between the two layers, namely a high interfacial resistance in the middle of the tape and a low interfacial resistance on its sides. With this architecture, when the current transfers from the stabilizer to the superconductor to circumvent a normal zone or a crack, a current density component along the width of the tape appears, required for the current to circumvent the high interfacial resistance. This current component does not exist in a classical tape architecture. To describe quantitatively this current transfer, we developed a quasi-analytical formula that computes the electric potential in the stabilization layer, from which we can derive the current densi...

中文翻译:

具有分流器架构的超导带中2D电位和电流传递的解析模型

这项工作提出了在具有电流分流器(CFD)结构的高温超导体(HTS)涂层的导体带的稳定器和超导层之间的电流传输长度(CTL)概念的概括。CFD体系结构包括两层之间的界面电阻不均匀,即带中间的界面电阻高,而其侧面的界面电阻低。采用这种结构,当电流从稳定器转移到超导体以避开正常区域或裂缝时,会出现沿胶带宽度的电流密度分量,这是电流绕过高界面电阻所必需的。当前的组件在经典的磁带体系结构中不存在。为了定量描述当前的转移,
更新日期:2020-10-08
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