Flexible and thermally stable resistive switching (RS) behaviors were studied based on a Ta/TaO x /stainless steel (SS) structure. This memory device demonstrates good mechanical endurance and information retention using the amorphous characteristic of TaO x . In addition, a 500 °C thermal annealing treatment when applied to a Ta/TaO x /SS memory device can effectively improve its thermal stability, and especially its resistance retention properties. Stable and flexible RS behaviors were observed at a test temperature of 200 °C for the memory device annealed at 500 °C. The improved thermal stability may be attributed to the formation of an amorphous-nanocrystalline mixed structure in the annealed TaO x film, preventing degradation of the resistance state. The presented RS behavior, with remarkable flexibility and thermal tolerance has potential applications in harsh environments, such as high-temperature flexible electronic devices.

中文翻译：

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Ta / TaO x /不锈钢结构中的灵活且热稳定的电阻式开关存储器

基于Ta / TaOx /不锈钢（SS）结构研究了柔性和热稳定的电阻切换（RS）行为。该存储器件利用TaO x的非晶态特性表现出良好的机械耐久性和信息保留能力。另外，当将其应用于Ta / TaO x / SS存储器件时，进行500℃的热退火处理可以有效地改善其热稳定性，尤其是其电阻保持特性。对于在500°C退火的存储设备，在200°C的测试温度下观察到稳定且灵活的RS行为。改善的热稳定性可以归因于在退火的TaO x膜中形成非晶-纳米晶混合结构，从而防止了电阻状态的降低。呈现的RS行为，