Enhanced fill factor for normal n‐i‐p planar heterojunction and mesoscopic perovskite solar cells using ruthenium‐doped TiO2 electron transporting layer,Progress in Photovoltaics

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Enhanced fill factor for normal n‐i‐p planar heterojunction and mesoscopic perovskite solar cells using ruthenium‐doped TiO2 electron transporting layer
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2020-10-08 , DOI: 10.1002/pip.3352
Sawanta S. Mali ₁ , Jyoti V. Patil _{1,

2} , Pravin S. Shinde ₃ , Chang Kook Hong ₁

Affiliation

Perovskite solar cells (PSCs) fabricated with a normal mesoscopic negative‐intrinsic‐positive (n‐i‐p) device structure have shown a great promise for further developments ever since their enhanced performance with high power conversion efficiency (PCE, 25.2%) and excellent reproducibility. The electron transporting layer (ETL) employed in such PSCs has been a critical component for improving their performance. The present work focuses on the synthesis of high‐quality Ru‐doped compact TiO₂ (c‐TiO₂) ETLs (Ru:c‐TiO₂) by a simple spin‐coating technique. Further, the role of Ru⁴⁺ cation doping in c‐TiO₂ is discussed in detail. A systematic study revealed that the Ru‐doping not only significantly influences the open‐circuit voltage (V_oc), current density (J_sc), and fill factor (FF) but also suppresses the charge recombination in the perovskite devices. The PSCs prepared using Ru‐c‐TiO₂ ETLs with optimum Ru‐doping content exhibited PCEs of 19.48% for planar and 20.87% for mesoscopic device architecture with enhanced photovoltage. Additionally, the fabricated PSC devices based on 1.5% Ru:c‐TiO₂ ETLs exhibited air stability over 200 days, which is much higher than that of a control device.

中文翻译：

使用钌掺杂的TiO2电子传输层提高了普通n-i-p平面异质结和介观钙钛矿太阳能电池的填充因子

钙钛矿型太阳能电池（PSC）具有正常的介观负本征（n - i - p）器件结构，自从其性能提高，功率转换效率高（PCE，25.2％）和极好的可重复性。在此类PSC中采用的电子传输层（ETL）已成为提高其性能的关键组件。本工作着重于通过简单的旋涂技术合成高质量的Ru掺杂的致密TiO ₂（c -TiO ₂）ETL（Ru：c -TiO ₂）。此外，Ru ⁴⁺阳离子掺杂在c中的作用‐TiO ₂进行了详细讨论。一项系统的研究表明，Ru掺杂不仅会显着影响开路电压（V _oc），电流密度（J _sc）和填充系数（FF），而且还会抑制钙钛矿器件中的电荷复合。一个PSC使用RU-制备Ç -TiO ₂的ETL具有19.48％为平面的，并且用于具有增强的光电压介观设备架构20.87％的Ru最佳掺杂含量表现出的PCE。此外，基于1.5％Ru：c- TiO ₂ ETL制成的PSC器件在200天内显示出空气稳定性，远高于控制器件。

更新日期：2020-10-08

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