Abstract The C doped BN thin films were assembled on Si (1 1 1) and quartz substrates utilizing BN target by magnetron sputtering with CH4 as reactive gas and Ar as working gas. Atomic force microscopy (AFM), Raman, X-ray photoelectron spectroscopy (XPS) and UV–visible (UV–vis) spectrophotometer are conducted to test and analyze the structures and optical properties of the thin films. The films deposited at various CH4 flow possess compact and uniform surface. All thin films are mainly composed of B–N, B–C and C–N chemical bonds. Raman spectra show that ID/IG in the thin films increases with the growing of gas flow rate ratio (R = FCH4/(FCH4+FAr)). Moreover, the optical band gap (Eg) of the C doped BN thin films is ranging from 4.04 to 5.16 eV. In addition, the Eg value of the C doped BN thin films decreased with the growing of R. This was owing to the increase of carbon content since this contributed to the increase of π bonding originating from C C bond.

中文翻译：

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射频反应磁控溅射沉积C掺杂BN薄膜的结构和光学性能

摘要 以CH4为反应气体，Ar为工作气体，利用BN靶材，通过磁控溅射在Si(1 1 1)和石英衬底上组装了C掺杂BN薄膜。使用原子力显微镜 (AFM)、拉曼 (Raman)、X 射线光电子能谱 (XPS) 和紫外-可见 (UV-vis) 分光光度计测试和分析薄膜的结构和光学性能。在不同 CH4 流量下沉积的薄膜具有致密且均匀的表面。所有薄膜主要由 B-N、B-C 和 C-N 化学键组成。拉曼光谱表明薄膜中的 ID/IG 随气体流量比的增加而增加（R = FCH4/(FCH4+FAr)）。此外，C掺杂的BN薄膜的光学带隙（Eg）范围为4.04至5.16 eV。此外，C掺杂的BN薄膜的Eg值随着R的增加而降低。