The irradiation resistance of tungsten (W) and a high-entropy alloy-based material W_0.5(TaTiVCr)_0.5 was analysed using depth marker implantation (F³⁺ ions irradiation). Mirror-polished W and W_0.5(TaTiVCr)_0.5 samples were exposed to 5.0 MeV and 4.2 MeV, respectively, F³⁺ ions up to a maximum fluence of 3.2x10¹² ions/cm². The scanning electron and atomic force microscopy of implanted W showed nanostructured features and pinholes, respectively, whereas the surface of implanted W_0.5(TaTiVCr)_0.5 remained fairly smooth. The nanoindentation hardness of W and W_0.5(TaTiVCr)_0.5 increased from 6.6 GPa to 8.5 GPa and from 13.9 GPa to 16.3 GPa, respectively, due to implantation. The ion implantation induced lattice defects and compressive stress, as a result, the BCC peaks of W and W_0.5(TaTiVCr)_0.5 moved to higher Bragg angles. The irradiation induced strain in W_0.5(TaTiVCr)_0.5 (4.4x10^-4) remained lower than that in pure W (8.5x10^-4). The comparison of W and W_0.5(TaTiVCr)_0.5 suggested the higher resistance of W_0.5(TaTiVCr)_0.5 to high energy ion implantation.

使用深度标记注入（F ³⁺离子照射）分析钨（W）和高熵合金基材料W _0.5（TaTiVCr）_0.5的耐辐照性。镜面抛光的W和W _0.5（TaTiVCr）_0.5样品分别暴露于5.0 MeV和4.2 MeV的F ³⁺离子下，最大通量为3.2x10 ¹²离子/ cm ²。注入的W的扫描电子和原子力显微镜分别显示出纳米结构特征和针孔，而注入的W _0.5（TaTiVCr）_0.5的表面仍然相当光滑。W和W的纳米压痕硬度为_0.5（TaTiVCr）_0.5由于注入而分别从6.6 GPa增加到8.5 GPa和从13.9 GPa增加到16.3 GPa。离子注入引起晶格缺陷和压应力，结果，W和W _0.5（TaTiVCr）_0.5的BCC峰移至较高的布拉格角。W _0.5（TaTiVCr）_0.5（4.4x10 ^-4）的辐照诱导应变仍低于纯W（8.5x10 ^-4）。W和W _0.5（TaTiVCr）_0.5的比较表明，W _0.5（TaTiVCr）_0.5对高能离子注入的抵抗力更高。