Recently, organometallic halide perovskites (OMHPs) have attracted much interest as a potential medium resolution detector for ionizing radiation sensing applications. Despite moderate success in the development of OMHP radiation detectors to date, efforts to optimize bulk carrier properties are often hindered by device degradation caused by surface recombination, ionic conductivity, environmental instability, and interface phenomena. In this study, methods of improving the interfacial and surface properties, detector stability, and responsivity of methylammonium lead tribromide (MAPB) semiconductor radiation detectors were investigated. We demonstrated that chemomechanical polishing with dimethylformamide (DMF) as a finishing step decreased surface roughness, removed surface trap states, and greatly enhanced device stability compared to mechanical polishing. Further, using a tin oxide (SnO₂) interface layer as hole blocking/electron transporting layer greatly increased the device fabrication success rate and helped mitigate the effect of ion migration reactions with metallic contacts. These post-growth processing techniques resulted in the first electron response of a MAPB detector exposed to alpha particles.

近年来，有机金属卤化物钙钛矿（OMHP）作为电离辐射感测应用的潜在中分辨率检测器引起了人们的极大兴趣。尽管迄今为止在OMHP辐射检测器的开发方面取得了一定的成功，但由于表面重组，离子电导率，环境不稳定性和界面现象引起的器件退化，常常阻碍了优化整体载流子性能的努力。在这项研究中，研究了改善界面和表面性质，检测器稳定性以及甲基铵三溴化铅（MAPB）半导体辐射检测器的响应度的方法。我们证明了使用二甲基甲酰胺（DMF）作为完成步骤的化学机械抛光可以降低表面粗糙度，消除表面陷阱状态，与机械抛光相比，大大提高了设备​​的稳定性。此外，使用氧化锡（SnO₂）作为空穴阻挡/电子传输层的界面层大大提高了器件的制造成功率，并有助于减轻与金属接触的离子迁移反应的影响。这些后生长处理技术导致MAPB检测器暴露于α粒子的第一个电子响应。