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Electronic Structure of an Ultrathin Molybdenum Oxide Film
Physics of the Solid State ( IF 0.9 ) Pub Date : 2020-10-08 , DOI: 10.1134/s1063783420100030
P. A. Dementev , E. V. Ivanova , M. N. Lapushkin , D. A. Smirnov , S. N. Timoshnev

Abstract

The electronic structure of an ultra-thin molybdenum oxide film obtained by oxidation of molybdenum at an oxygen pressure of 1 Torr and the effect of adsorption of sodium atoms on its electronic structure are studied by photoelectron spectroscopy. Photoemission spectra from the valence band and core levels of O 2s, Mo 3d, Mo 3p, and Na 1p are studied upon synchrotron excitation in the photon energy range 80–600 eV. It is shown that in the formed oxide film, molybdenum is in two states: Mo6+ and Mo4+. On the surface of the oxide, oxygen is induced both in the composition of the oxides and in hydroxyl. It was shown that MoO3 is formed on the surface, and MoO2 at a distance from the surface. The deposition of Na atoms leads to intercalation of the molybdenum oxide layer.



中文翻译:

超薄氧化钼膜的电子结构

摘要

通过光电子能谱研究了通过在1 Torr的氧气压力下氧化钼获得的超薄氧化钼膜的电子结构以及钠原子的吸附对其电子结构的影响。在光子能量范围为80–600 eV的同步加速器激发下,研究了O 2 s,Mo 3 d,Mo 3 p和Na 1 p的价带和核能级的光发射光谱。结果表明,在形成的氧化膜中,钼处于两种状态:Mo 6+和Mo 4+。在氧化物的表面上,在氧化物的组成和羟基中都诱导出氧。结果表明,在表面上形成了MoO 3,并且MoO2距表面一定距离。Na原子的沉积会导致氧化钼层的插入。

更新日期:2020-10-08
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