Monolayer transition metal dichalcogenides have emerged as promising materials for optoelectronic and nanophotonic devices. However, the low photoluminescence (PL) quantum yield (QY) hinders their various potential applications. Here we engineer and enhance the PL intensity of monolayer WS₂ by femtosecond laser irradiation. More than two orders of magnitude enhancement of PL intensity as compared to the as-prepared sample is determined. Furthermore, the engineering time is shortened by three orders of magnitude as compared to the improvement of PL intensity by continuous-wave laser irradiation. Based on the evolution of PL spectra, we attribute the giant PL enhancement to the conversion from trion emission to exciton, as well as the improvement of the QY when exciton and trion are localized to the new-formed defects. We have created microstructures on the monolayer WS₂ based on the enhancement of PL intensity, where the engineered structures can be stably stored for more than three years. This flexible approach with the feature of excellent long-term storage stability is promising for applications in information storage, display technology, and optoelectronic devices.

单层过渡金属二卤化物已经成为光电子和纳米光子器件的有前途的材料。但是，低光致发光（PL）量子产率（QY）阻碍了它们的各种潜在应用。在这里，我们设计并增强了单层WS ₂的PL强度通过飞秒激光照射。与所制备的样品相比，确定了PL强度提高了两个数量级以上。而且，与通过连续波激光照射提高PL强度相比，工程时间缩短了三个数量级。基于PL光谱的演变，我们将PL的巨大增强归因于从tri子发射到激子的转换，以及当激子和tri子局限在新形成的缺陷时QY的提高。我们在单层WS ₂上创建了微结构基于PL强度的增强，工程结构可以稳定存放三年以上。这种具有出色的长期存储稳定性的灵活方法对于信息存储，显示技术和光电设备中的应用很有希望。