Abstract

The influence of a low axial temperature gradient on the growth of the Ge:Ga crystal by the vertical Bridgman technique was investigated. The axial temperature gradient of 3.3 K/cm is shown to provide conditions for polycrystalline growth of Ge:Ga crystals. The layers with the distances from 14 to 277 μm are found in the grown crystals with a concave of the solid-liquid interface. The motion of textolite particles in distilled water is visualized by the light cut method at different values of axial and radial temperature gradients. In the absence of the radial temperature gradient, no convection is observed when the axial temperature gradient increases from 0.1 to 6.5 K/cm. In this case, the particle motion velocity increases proportionally to the axial temperature gradient due to the occurrence of thermal diffusion. The convective flow appear in the liquid at the radial temperature gradient of 0.6 K/cm and an axial gradient above 0.1 K/cm.

中文翻译：

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垂直布里奇曼法研究低轴向温度梯度对掺镓锗晶体生长的影响

摘要

通过垂直布里奇曼技术研究了低轴向温度梯度对Ge：Ga晶体生长的影响。轴向温度梯度为3.3 K / cm，为Ge：Ga晶体的多晶生长提供了条件。在具有固液界面凹面的生长晶体中发现距离为14至277μm的层。通过光切法在轴向和径向温度梯度的不同值下观察到蒸馏水中的纺织颗粒的运动。在没有径向温度梯度的情况下，当轴向温度梯度从0.1增加到6.5 K / cm时，没有观察到对流。在这种情况下，由于发生热扩散，粒子运动速度与轴向温度梯度成比例地增加。