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Room temperature, single-mode 1.0 THz semiconductor source based on long-wavelength infrared quantum-cascade laser
Applied Physics Express ( IF 2.3 ) Pub Date : 2020-10-07 , DOI: 10.35848/1882-0786/abbb3c
Shohei Hayashi , Akio Ito , Masahiro Hitaka , Kazuue Fujita

We demonstrate a single-mode 1.0 THz quantum-cascade laser source with difference-frequency generation. The room temperature electrically pumped monolithic source is based on a long-wavelength dual-upper-state active region in which high MIR to THz conversion efficiency is obtained. Two-section buried distributed feedback grating configuration with two different lengths are used to produce two single-mode MIR pumps, and as a result, the device exhibits single-mode THz emission with a side mode suppression ratio of ~25 dB at a frequency of 1.03 THz. A peak output power of 18 μW with a high conversion efficiency of ~270 μW/W2 is obtained at room temperature

中文翻译:

基于长波长红外量子级联激光器的室温单模 1.0 THz 半导体源

我们展示了具有差频生成的单模 1.0 THz 量子级联激光源。室温电泵浦单片源基于长波长双上能态有源区,其中获得了高 MIR 到 THz 转换效率。具有两种不同长度的两段埋入式分布式反馈光栅配置用于产生两个单模 MIR 泵浦,因此,该器件在频率为 25 dB 时表现出边模抑制比为~25 dB 的单模太赫兹发射。 1.03 太赫兹。在室温下获得 18 μW 的峰值输出功率和 ~270 μW/W2 的高转换效率
更新日期:2020-10-07
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