Monolayer iron germanium telluride Fe₃GeTe₂, one of the typical two-dimensional ferromagnetic materials, hitherto, has only been studied by exfoliated micron-sized samples. We achieve high-quality wafer-scale growth of thin Fe₃GeTe₂ films by molecular beam epitaxy, greatly expanding the types of characterization tools employable and providing the possibility for its integration in devices like consumer electronics. Thickness-dependent transport measurements are used to characterize and probe for magnetic order. Ferromagnetic states exist in 1–10 layer thick Fe₃GeTe₂, with Curie temperatures ranging from ~75 K in one layer samples to above 175 K in ten layer samples. A single ferromagnetic phase with significant magnetic anisotropy is revealed for all layer numbers. We submit the capability of synthesizing, wafer-scale Fe₃GeTe₂ as an essential step towards its fulfillment in any applications involving magnetism, such as spintronics.

迄今为止，单层碲化铁锗Fe ₃ GeTe ₂是典型的二维铁磁材料之一，仅通过剥落的微米级样品进行了研究。我们通过分子束外延技术实现了Fe ₃ GeTe ₂薄膜的高质量晶圆级生长，极大地扩展了可使用的表征工具的类型，并为将其集成到诸如消费电子产品之类的设备中提供了可能性。取决于厚度的传输测量值用于表征和探测磁阶。铁磁性态存在于1-10层厚的Fe ₃ GeTe _2中，居里温度范围从一层样品中的〜75 K到十层样品中的175 K以上。对于所有层数都显示出具有明显磁各向异性的单个铁磁相。我们提出了合成晶圆级Fe ₃ GeTe _2的能力，这是朝着在涉及磁性的任何应用（例如自旋电子学）中实现其迈出的重要一步。