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Low Threshold Voltages Electrochemically Drive Gold Migration in Halide Perovskite Devices
ACS Energy Letters ( IF 19.3 ) Pub Date : 2020-10-06 , DOI: 10.1021/acsenergylett.0c01805 Ross A. Kerner 1, 2 , Lianfeng Zhao 1 , Steven P. Harvey 2 , Joseph J. Berry 2 , Jeffrey Schwartz 3 , Barry P. Rand 1, 4
ACS Energy Letters ( IF 19.3 ) Pub Date : 2020-10-06 , DOI: 10.1021/acsenergylett.0c01805 Ross A. Kerner 1, 2 , Lianfeng Zhao 1 , Steven P. Harvey 2 , Joseph J. Berry 2 , Jeffrey Schwartz 3 , Barry P. Rand 1, 4
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The constituent ions of halide perovskite materials are mobile in the solid state and known to participate in reduction/oxidation reactions. Yet few parameters related to electrochemical processes occurring within devices have been carefully determined. Here, we characterize such reactions in model MAPbI3 perovskite devices, and we quantify threshold voltages for key reactions. Gold is oxidized and mobilized under nitrogen, in the dark, at the MAPbI3/Au interface at 0.8 V. When this interface is buffered with the organic hole transport material (HTM), 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamino)-9,9′-spirobifluorene, MAPbI3 begins to degrade at 1.2 V; degradation liberates ions that subsequently enable Au migration. Thresholds are insensitive to MAPbI3 thickness or choice of organic HTM or oxide cathode, which suggests that these reactions are driven electrochemically; the electric field across the device is less important. These results have profound implications for understanding in operando degradation pathways of optoelectronic perovskite devices that are varied in terms of interface structures, active material compositions, and ranges of external stressors.
中文翻译：
低阈值电压电化学驱动卤化物钙钛矿器件中的金迁移
卤化钙钛矿材料的组成离子在固态下是可移动的，已知参与还原/氧化反应。尚未仔细确定与发生在装置内的电化学过程相关的参数。在这里，我们表征了MAPbI 3型钙钛矿装置中的此类反应，并量化了关键反应的阈值电压。在黑暗中，在0.8 V的MAPbI 3 / Au界面上，金会在氮气下被氧化和迁移。当该界面被有机空穴传输材料（HTM）缓冲时，2,2'，7,7'-四（ N，N-二-对甲氧基苯氨基）-9,9'-螺双芴，MAPbI 3在1.2 V时开始下降；降解释放出离子，这些离子随后使Au迁移。阈值对MAPbI 3厚度或有机HTM或氧化物阴极的选择不敏感，这表明这些反应是电化学驱动的。设备上的电场不太重要。这些结果对于理解钙钛矿型光电器件的操作降解途径具有深远的意义，该过程在界面结构，活性材料组成和外部应力源范围方面有所不同。
更新日期：2020-11-13
中文翻译：
低阈值电压电化学驱动卤化物钙钛矿器件中的金迁移
卤化钙钛矿材料的组成离子在固态下是可移动的，已知参与还原/氧化反应。尚未仔细确定与发生在装置内的电化学过程相关的参数。在这里，我们表征了MAPbI 3型钙钛矿装置中的此类反应，并量化了关键反应的阈值电压。在黑暗中，在0.8 V的MAPbI 3 / Au界面上，金会在氮气下被氧化和迁移。当该界面被有机空穴传输材料（HTM）缓冲时，2,2'，7,7'-四（ N，N-二-对甲氧基苯氨基）-9,9'-螺双芴，MAPbI 3在1.2 V时开始下降；降解释放出离子，这些离子随后使Au迁移。阈值对MAPbI 3厚度或有机HTM或氧化物阴极的选择不敏感，这表明这些反应是电化学驱动的。设备上的电场不太重要。这些结果对于理解钙钛矿型光电器件的操作降解途径具有深远的意义，该过程在界面结构，活性材料组成和外部应力源范围方面有所不同。
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