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Tailorable Dielectric Performance of Niobium‐Modified Poly(hydridomethylsiloxane) Precursor‐Derived Ceramic Nanocomposites
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-10-07 , DOI: 10.1002/pssa.202000417 Ganesh Babu Thiyagarajan 1 , Ekaterina Koroleva 2 , Alexey Filimonov 3 , Sergey Vakhrushev 2 , Ravi Kumar 1
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-10-07 , DOI: 10.1002/pssa.202000417 Ganesh Babu Thiyagarajan 1 , Ekaterina Koroleva 2 , Alexey Filimonov 3 , Sergey Vakhrushev 2 , Ravi Kumar 1
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The low‐frequency dielectric behavior of in situ crystallized and stabilized nanocrystalline t‐NbO2 in amorphous silicon oxycarbide (SiOC) ceramic nanocomposites derived from niobium‐modified poly(hydridomethylsiloxane) (PHMS) is reported. Commercially available PHMS is modified using Nb(OC2H5)5 via chemical and mechanical mixing route. It is observed that the synthesis route and heat‐treatment temperatures significantly affect the crystallization of the ceramic phases, where c‐NbC and t‐NbO2 in amorphous SiOC are formed through chemical and mechanical modification route, respectively. The variation in dielectric permittivity and loss at room temperature with respect to ceramic phases is comprehensively investigated. In contrast to amorphous SiOC ceramics derived from PHMS (ε′ = 100.0 at 1 Hz), t‐NbO2 in amorphous SiOC ceramic exhibits colossal dielectric permittivity (ε′ = 5.0 × 105 at 1 Hz) with low loss (tan δ < 3.0). This is attributed to an interfacial charge polarization and in situ growth of insulator/semiconductor/insulator ceramic phases in amorphous SiOC ceramic nanocomposites.
中文翻译：
铌改性的聚（氢化甲基硅氧烷）前体衍生的陶瓷纳米复合材料的可定制介电性能
据报道，在从铌改性的聚氢甲基硅氧烷（PHMS）衍生出来的非晶态碳氧化硅（SiOC）陶瓷纳米复合材料中，原位结晶并稳定的纳米晶t- NbO 2的低频介电行为。通过化学和机械混合途径，使用Nb（OC 2 H 5）5对市售的PHMS进行改性。可以看出，合成路线和热处理温度显着影响了陶瓷相的结晶，其中c‐ NbC和t‐ NbO 2通过化学和机械改性途径分别形成非晶SiOC。全面研究了陶瓷相在室温下介电常数和损耗的变化。与此相反，从PHMS（衍生无定形的SiOC陶瓷ε '= 100.0在1Hz），叔的NbO 2在无定形的SiOC陶瓷表现出巨大的介电常数（ε '= 5.0×10 5在1Hz）具有低损耗（tanδ δ < 3.0）。这归因于非晶SiOC陶瓷纳米复合材料中的界面电荷极化和绝缘体/半导体/绝缘体陶瓷相的原位生长。
更新日期：2020-11-21
中文翻译：
铌改性的聚（氢化甲基硅氧烷）前体衍生的陶瓷纳米复合材料的可定制介电性能
据报道，在从铌改性的聚氢甲基硅氧烷（PHMS）衍生出来的非晶态碳氧化硅（SiOC）陶瓷纳米复合材料中，原位结晶并稳定的纳米晶t- NbO 2的低频介电行为。通过化学和机械混合途径，使用Nb（OC 2 H 5）5对市售的PHMS进行改性。可以看出，合成路线和热处理温度显着影响了陶瓷相的结晶，其中c‐ NbC和t‐ NbO 2通过化学和机械改性途径分别形成非晶SiOC。全面研究了陶瓷相在室温下介电常数和损耗的变化。与此相反，从PHMS（衍生无定形的SiOC陶瓷ε '= 100.0在1Hz），叔的NbO 2在无定形的SiOC陶瓷表现出巨大的介电常数（ε '= 5.0×10 5在1Hz）具有低损耗（tanδ δ < 3.0）。这归因于非晶SiOC陶瓷纳米复合材料中的界面电荷极化和绝缘体/半导体/绝缘体陶瓷相的原位生长。
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