Few‐layer black phosphorus (BP) is a promising semiconductor with excellent optoelectronic properties. However, the poor stabilization and strong asymmetry between electron and hole transports hinder the application of BP. Doping of heteroatoms is an effective strategy to regulate the electronic structure and stability of BP without sacrificing its unique 2D structure, which is a promising way to tune the physicochemical properties of BP for various applications. In this review, the recent advances in doping engineering of BP are summarized, involving the theoretical prediction of new characteristic for doped BP and the corresponding experimental synthesis methods. The effects of dopant atoms on the structure and performance of BP and its related applications, such as the field‐effect transistors, optoelectronic devices, inverter devices, and catalysis, are also summarized.

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杂原子掺杂黑磷及其应用研究进展

很少有几层黑磷（BP）是具有良好光电性能的有前途的半导体。但是，电子与空穴传输之间的稳定性差和不对称性强，阻碍了BP的应用。掺杂杂原子是调节BP的电子结构和稳定性而不牺牲其独特的2D结构的有效策略，这是一种针对各种应用调整BP的理化性质的有前途的方法。本文综述了BP掺杂技术的最新进展，包括掺杂BP新特性的理论预测以及相应的实验合成方法。掺杂原子对BP及其相关应用（例如场效应晶体管，光电器件，逆变器器件，