Excellent Passivation of n‐Type Silicon Surfaces Enabled by Pulsed‐Flow Plasma‐Enhanced Chemical Vapor Deposition of Phosphorus Oxide Capped by Aluminum Oxide,Physica Status Solidi-Rapid Research Letters

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Excellent Passivation of n‐Type Silicon Surfaces Enabled by Pulsed‐Flow Plasma‐Enhanced Chemical Vapor Deposition of Phosphorus Oxide Capped by Aluminum Oxide
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2020-10-07 , DOI: 10.1002/pssr.202000399
Jimmy Melskens ₁ , Roel J. Theeuwes ₁ , Lachlan E. Black ₂ , Willem-Jan H. Berghuis ₁ , Bart Macco ₁ , Paula C. P. Bronsveld ₃ , Erwin (W. M. M.) Kessels ₁

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Phosphorus oxide (PO_x) capped by aluminum oxide (Al₂O₃), prepared by atomic layer deposition (ALD), has recently been introduced as a surface passivation scheme for planar n‐type FZ silicon. In this work, a fast pulsed‐flow plasma‐enhanced chemical vapor deposition (PECVD) process for the PO_x layer is introduced, making it possible to increase the PO_x deposition rate significantly while maintaining the PO_x/Al₂O₃ passivation quality. An excellent surface passivation is realized on n‐type planar FZ and Cz substrates (J₀ = 3.0 fA cm⁻²). Furthermore, it is demonstrated that the PO_x/Al₂O₃ stack can passivate textured surfaces and that the application of an additional PECVD SiN_x capping layer renders the stack stable to a firing treatment that is typically used in fire‐through contact formation (J₀ = 12 fA cm⁻²). The excellent surface passivation is enabled by a high positive fixed charge density (Q_f ≈ 4 × 10¹² cm⁻²) and an ultralow interface defect density (D_it ≈ 5 × 10¹⁰ eV⁻¹ cm⁻²). Finally, outstanding passivation is demonstrated on textured silicon with a heavy n⁺ surface doping, as is used in solar cells, on par with alnealed SiO₂. These findings indicate that PO_x/Al₂O₃ is a highly suited passivation scheme for n‐type silicon surfaces in typical industrial solar cells.

中文翻译：

脉冲流等离子体增强氧化铝包覆的氧化磷对n型硅表面的出色钝化作用

通过原子层沉积（ALD）制备的被氧化铝（Al ₂ O ₃）覆盖的氧化磷（PO _x）最近被用作平面n型FZ硅的表面钝化方案。在这项工作中，引入了一种用于PO _x层的快速脉冲流等离子体增强化学气相沉积（PECVD）工艺，从而可以在保持PO _x / Al ₂ O ₃钝化质量的同时显着提高PO _x沉积速率。。在n型平面FZ和Cz基板上实现了出色的表面钝化（J ₀ = 3.0 fA cm^-2）。此外，已证明PO _x / Al ₂ O ₃叠层可以钝化带纹理的表面，并且附加的PECVD SiN _x覆盖层的应用可使叠层对通常用于直通接触形成的焙烧处理保持稳定（J ₀ = 12 fA cm ^-2）。优异的表面钝化被高正的固定电荷密度（已启用Q _˚F ≈4×10 ¹² 厘米^-2）和超低界面缺陷密度（d_它 ≈5×10 ¹⁰ 电子伏特^-1 厘米^-2）。最终，在具有重n ⁺表面掺杂的织构硅上表现出了出色的钝化效果，与在太阳能电池中使用的硅相媲美，且与SiO ₂齐平。这些发现表明，PO _x / Al ₂ O ₃是典型工业太阳能电池中n型硅表面的高度钝化方案。

更新日期：2020-10-07

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