Abstract As open-shell moieties are increasingly integrated into organic electronic devices, there remains a need to establish the interactions that occur between these oxidation-reduction-active (redox-active) radical species and commonly-used conjugated polymers. In this report, we show that the addition of the stable radical galvinoxyl to the conjugated polymer poly(3-hexylthiophene) (P3HT) alters the thin film transistor response from semiconducting to conducting as well as modestly enhances the electrical conductivity. This interaction is not seen with other radical species. While an increase in charge carrier concentration is observed, the interaction does not seem to be otherwise consistent with a simple charge-transfer doping mechanism, due to the mismatched reduction and oxidation potentials of the two species. Additionally, no freeze-out of charge carriers is observed at lower temperatures. It is also not due to parallel conduction through the radical fraction of the bulk composite, as the radical species is non-conductive. Hole mobility is enhanced at lower concentrations of the radical, but it decreases at higher concentrations due to the reduced fraction of conductive material in the polymer bulk. Despite the increase in mobility at lower concentrations, the activation energy for charge transport is increased by the presence of the radical. This suggests that the radical is likely filling trap states within the P3HT for the composite thin film while not affecting their energetic distribution.

中文翻译：

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添加自由基掺杂剂后改变共轭聚合物中的场效应晶体管响应

摘要 随着开壳部分越来越多地集成到有机电子器件中，仍然需要建立这些氧化还原活性（氧化还原活性）自由基物种和常用共轭聚合物之间发生的相互作用。在本报告中，我们表明将稳定的自由基加尔万氧基添加到共轭聚合物聚（3-己基噻吩）（P3HT）中可以改变薄膜晶体管的响应，从半导体到导电，并适度提高电导率。这种相互作用在其他自由基物种中是看不到的。虽然观察到电荷载流子浓度增加，但由于两种物质的还原电位和氧化电位不匹配，相互作用似乎与简单的电荷转移掺杂机制不一致。此外，在较低温度下没有观察到电荷载体的冻结。这也不是由于通过块状复合材料的自由基部分的平行传导，因为自由基物质是不导电的。空穴迁移率在较低的自由基浓度下增强，但在较高浓度下由于聚合物本体中导电材料的比例减少而降低。尽管在较低浓度下迁移率增加，但自由基的存在增加了电荷传输的活化能。这表明自由基可能填充复合薄膜的 P3HT 内的陷阱态，同时不影响它们的能量分布。因为自由基是不导电的。空穴迁移率在较低的自由基浓度下增强，但在较高浓度下由于聚合物本体中导电材料的比例减少而降低。尽管在较低浓度下迁移率增加，但自由基的存在增加了电荷传输的活化能。这表明自由基可能填充复合薄膜的 P3HT 内的陷阱态，同时不影响它们的能量分布。因为自由基是不导电的。空穴迁移率在较低的自由基浓度下增强，但在较高浓度下由于聚合物本体中导电材料的比例减少而降低。尽管在较低浓度下迁移率增加，但自由基的存在增加了电荷传输的活化能。这表明自由基可能填充复合薄膜的 P3HT 内的陷阱态，同时不影响它们的能量分布。自由基的存在增加了电荷传输的活化能。这表明自由基可能填充复合薄膜的 P3HT 内的陷阱态，同时不影响它们的能量分布。自由基的存在增加了电荷传输的活化能。这表明自由基可能填充复合薄膜的 P3HT 内的陷阱态，同时不影响它们的能量分布。