Silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) are expected to be an attractive replacement for Si MOSFETs in high power applications due to their high blocking voltage, high switching speed, and low switching losses. However, a high switching speed can lead to voltage and current overshoot as well as oscillation during the switching process, which results in additional losses and severe electromagnetic interference. It can also exceed the limit of the SiC MOSFET and cause irreversible damage to the device. Based on an analysis of the SiC MOSFET switching process voltage and current overshoot and oscillation generation mechanism, a voltage-injected active gate driver (AGD) was proposed. The proposed AGD can suppress the voltage and current overshoot and oscillation by injecting voltage into the gate of the SiC MOSFET during specific switching stages. Experimental results show that when compared with the conventional gate driver (CGD), the proposed AGD can suppress the voltage and current overshoot peaks by 16% and 12%, while reducing voltage and current oscillation times by 58% and 31%, respectively.

中文翻译：

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用于改善 SiC MOSFET 开关性能的新型驱动器电路

碳化硅 (SiC) 金属氧化物半导体场效应晶体管 (MOSFET) 由于其高阻断电压、高开关速度和低开关损耗，有望成为高功率应用中 Si MOSFET 的有吸引力的替代品。然而，高开关速度会导致电压和电流过冲以及开关过程中的振荡，从而导致额外的损耗和严重的电磁干扰。它也可能超过 SiC MOSFET 的限制，并对器件造成不可逆转的损坏。基于对SiC MOSFET开关过程电压和电流过冲及振荡产生机制的分析，提出了一种电压注入式有源栅极驱动器（AGD）。所提出的 AGD 可以通过在特定开关阶段将电压注入 SiC MOSFET 的栅极来抑制电压和电流过冲和振荡。实验结果表明，与传统的栅极驱动器 (CGD) 相比，所提出的 AGD 可以将电压和电流过冲峰值抑制 16% 和 12%，同时将电压和电流振荡时间分别减少 58% 和 31%。