An equivalent single-conductor model is developed for all possible structures of mixed carbon nanotube bundle interconnects at the 14-nm technology node. The results are analyzed by including the effect of scattering caused by the surface roughness of the dielectric substrate material in the temperature range from 300 to 500 K. Widely used dielectrics such as silicon dioxide (SiO₂), boron nitride (BN), and silicon carbide (SiC) are compared with respect to their mean free path due to surface roughness scattering. The dynamic and functional crosstalk-induced delay, crosstalk-induced noise area, and frequency spectra of all the structures of mixed CNT bundles (MCB) are analyzed, including the effect of scattering caused by substrate surface roughness, over the complete temperature range from 300 to 500 K. The results reveal that MCB structure 4 (S4) on the SiC substrate outperforms all the other structures built on the other dielectric materials. Also, the results for S4 show a fourfold higher crosstalk-induced delay when built on each substrate material, viz. BN, SiO₂, and SiC, as compared with a smooth surface over the complete range of temperature from 300 to 500 K. The crosstalk-induced noise area (CINA) for structure S4 is almost five times higher on the investigated substrate materials (BN, SiO₂, and SiC) compared with a smooth surface. Moreover, the bandwidth of S4 on SiC (S4 SiC) is found to be greater than on the other substrate materials (SiO₂ and BN) under the dynamic signal switching condition.

针对14纳米技术节点处的混合碳纳米管束互连的所有可能结构，开发了等效的单导体模型。通过包括温度在300至500 K范围内的介电基板材料的表面粗糙度引起的散射影响来分析结果。广泛使用的介电材料，例如二氧化硅（SiO ₂），氮化硼（BN）和碳化硅（SiC）在表面平均散射引起的平均自由程方面进行了比较。在300°C的整个温度范围内，分析了混合CNT束（MCB）的所有结构的动态和功能性串扰引起的延迟，串扰引起的噪声区域以及频谱，包括衬底表面粗糙度引起的散射影响。至500K。结果表明，SiC衬底上的MCB结构4（S4）优于其他基于其他介电材料构建的结构。同样，当在每种基板材料上构建时，S4的结果显示出更高的四倍的串扰引起的延迟，即。BN，SiO ₂与SiC相比，在300到500 K的整个温度范围内都具有光滑的表面。在所研究的衬底材料（BN，SiO ₂，Sn）上，结构S4的串扰感应噪声区域（CINA）几乎高出五倍。和SiC）与光滑的表面进行比较。此外，发现在动态信号切换条件下，SiC（S4 SiC）上的S4带宽大于其他衬底材料（SiO ₂和BN）上的S4带宽。