This paper addresses the effect of temperature variation on the performance of a novel device structure Si-doped Hf[Formula: see text] negative capacitance junctionless tunnel field effect transistor (Si:Hf[Formula: see text] NC-JLTFET). Here, Si:Hf[Formula: see text] ferroelectric material is deployed as gate stack along with high-K gate dielectric Hf[Formula: see text]. Si:Hf[Formula: see text] ferroelectric material generates NC effect during the device operation. This phenomenon is an effective technique for intrinsic voltage amplification, reduction in power supply, as well as minimization of power dissipation. The proposed device structure has two variants, symmetric and asymmetric with respect to the oxide thickness between electrode and Si body at both drain and source sides. As band-to-band tunneling in TFET is temperature dependent, it is very crucial to analyze the impact of temperature variation on the device performance. This work is mainly focused on investigating the device dc performance parameters, analog/RF performance parameters and linearity performance parameters by observing the impact of temperature variation. The device characteristics reveal that for dc and RF performance parameters, asymmetric structure shows better result. Highest [Formula: see text] ratio and minimum SS are reported as [Formula: see text] and 20.038 mV/dec, respectively, at 300K for asymmetric structure. At elevated temperatures higher cutoff frequency and reduced intrinsic delay project the device as a strong candidate for ultra low-power and high switching speed applications. Further, the reported device shows better linearity performance at higher temperatures.

中文翻译：

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基于Si掺杂HfO2铁电材料的负电容无结TFET的优化：温度对RF/线性性能的影响

本文探讨了温度变化对新型器件结构 Si 掺杂 Hf[公式：见文本] 负电容无结隧道场效应晶体管（Si:Hf[公式：见文本] NC-JLTFET）性能的影响。在这里，Si:Hf[公式：见正文]铁电材料与高 K 栅极电介质 Hf[公式：见正文]一起作为栅叠层部署。Si:Hf[公式：见正文] 铁电材料在器件运行过程中产生NC效应。这种现象是本征电压放大、降低电源以及最小化功耗的有效技术。所提出的器件结构有两种变体，关于漏极和源极侧的电极和硅体之间的氧化物厚度对称和不对称。由于 TFET 中的带间隧道效应与温度有关，分析温度变化对器件性能的影响至关重要。这项工作主要集中在通过观察温度变化的影响来研究器件的直流性能参数、模拟/射频性能参数和线性性能参数。器件特性表明，对于直流和射频性能参数，非对称结构表现出更好的效果。对于不对称结构，在 300K 时，最高 [公式：见文本] 比率和最小 SS 分别报告为 [公式：见文本] 和 20.038 mV/dec。在升高的温度下，更高的截止频率和更低的固有延迟使该器件成为超低功耗和高开关速度应用的有力候选者。此外，报道的器件在较高温度下表现出更好的线性性能。