Three-dimensional distribution of grain boundaries (GBs) and generation sources of dislocation clusters is examined in a cast-grown high-performance multicrystalline silicon ingot for commercial solar cells. A significant number of dislocations are generated nearby some triple junctions of random angle GBs, although it is believed that such non-coherent GBs would not induce large strain during the cast growth. This explosive generation of dislocations would take place when the triple junctions are interacted with multiple Σ3{111} GBs. A segment of the random angle GB connected with a pair of Σ3{111} GBs nearby the triple junction would act as a dislocation source.

在用于商业太阳能电池的铸造生长的高性能多晶硅锭中检查了晶界 (GB) 的三维分布和位错簇的产生源。在随机角度GB的一些三重结附近产生大量位错，尽管相信这种非共格GB在铸件生长期间不会引起大应变。当三结与多个 Σ3{111} GB 相互作用时，会发生这种爆炸性的位错生成。与三结附近的一对 Σ3{111} GB 相连的随机角 GB 的一段将充当位错源。