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A Film Bulk Acoustic Resonator Based on Ferroelectric Aluminum Scandium Nitride Films
Journal of Microelectromechanical Systems ( IF 2.7 ) Pub Date : 2020-10-01 , DOI: 10.1109/jmems.2020.3014584
Jialin Wang , Mingyo Park , Stefan Mertin , Tuomas Pensala , Farrokh Ayazi , Azadeh Ansari

This work reports on the first demonstration of the frequency tuning and intrinsic polarization switching of film bulk acoustic resonators (FBARs), based on sputtered AlScN piezoelectric thin films with Sc/(Al + Sc) ratio of approx. 30%. A box-like ferroelectric hysteresis behavior of 900 nm-thick Al0.7Sc0.3N sputtered films is obtained, showing a coercive electric field at ~3 MV/cm. The fundamental thickness-mode resonance of the bulk acoustic wave (BAW) resonator is measured at 3.17 GHz frequency with an excellent electromechanical coupling coefficient ( $k_{t}^{2}$ ) of 18.1%. The FBAR frequency response is studied, in both (i) the linear tuning regime, upon application of DC electric fields below the coercive field; as well as (ii) the polarization switching regime, upon application of electric fields above the coercive field. A large linear tuning range of 215 ppm $\times \,\,\mu \text{m}$ /V is obtained in case (i), resulting from the high scandium content. The series resonance frequency of the FBARs is switched ON and OFF in (ii) upon application of 350 V unipolar waveform across the Al0.7Sc0.3N thickness. This is the first demonstration of the intrinsically switchable AlN-based FBARs with a large tuning range; and record high $k_{t}^{2}$ reported for AlN-based FBARs to date. Furthermore, this work paves the way for realization of tunable and switchable wideband acoustic filters operating at super high frequency ranges (SHF). [2020-0203]

中文翻译:

基于铁电氮化铝钪薄膜的薄膜体声波谐振器

这项工作报告了基于溅射 AlScN 压电薄膜的薄膜体声波谐振器 (FBAR) 的频率调谐和本征极化切换的首次演示,Sc/(Al + Sc) 比率约为 30%。获得了 900 nm 厚的 Al 0.7 Sc 0.3 N 溅射薄膜的盒状铁电滞后行为,显示出~3 MV/cm 的矫顽电场。体声波 (BAW) 谐振器的基本厚度模式谐振在 3.17 GHz 频率下测量,具有出色的机电耦合系数 ( $k_{t}^{2}$ ) 的 18.1%。在以下两种情况下研究 FBAR 频率响应:(i) 线性调谐机制,在矫顽场以下施加直流电场时;以及 (ii) 极化转换机制,在矫顽场上方施加电场时。215 ppm 的大线性调谐范围 $\times \,\,\mu \text{m}$ /V 在情况 (i) 中获得,这是由于钪含量高。FBAR 的串联谐振频率在 (ii) 中在跨越 Al 0.7 Sc 0.3 N 厚度应用 350 V 单极波形时打开和关闭。这是具有大调谐范围的本征可切换的基于 AlN 的 FBAR 的首次演示;并创历史新高 $k_{t}^{2}$ 迄今为止,报告了基于 AlN 的 FBAR。此外,这项工作为实现在超高频范围 (SHF) 下工作的可调谐和可切换宽带声学滤波器铺平了道路。[2020-0203]
更新日期:2020-10-01
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