In this paper, the near-carrier enhancement of phase-noise (PN) at turnover temperature ( ${T} _{to}$ ) in a quasi-thickness-Lamé (QTL) mode thin-film piezoelectric-on-silicon (TPoS) oscillator is reported for the first time. QTL-TPoS resonators fabricated on degenerately-doped n-type silicon offer a ${T} _{to}$ greater than 80°C and are suitable for implementation of highly-stable ovenized oscillators. In this work, a ~123MHz QTL-TPoS resonator is heated up to ${T} _{to}$ (~90°C) by injecting current through the silicon body of the resonator. It is experimentally observed that at turnover temperature, the phase-noise slope close to the carrier frequency ( $\Delta $ f < 100Hz) decreases substantially in contrast to the expected trends. A ~10dB improvement in phase noise at 10Hz offset and a ~25dB improvement at 1Hz offset is recorded when the oscillator is operating at ${T} _{to}$ compared to room temperature. [2020-0206]

中文翻译：

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薄膜硅基压电振荡器在翻转温度下的近载流子相位噪声抑制

在本文中，相位噪声（PN）在周转温度下的近载波增强（ ${T} _{to}$ ) 在准厚度拉梅 (QTL) 模式中，首次报道了硅基压电 (TPoS) 振荡器。在简并掺杂的 n 型硅上制造的 QTL-TPoS 谐振器提供了一个 ${T} _{to}$ 高于 80°C，适用于实现高度稳定的恒温振荡器。在这项工作中，~123MHz QTL-TPoS 谐振器被加热到 ${T} _{to}$ (~90°C) 通过谐振器的硅体注入电流。实验观察到，在翻转温度下，相位噪声斜率接近载波频率（ $\Delta $ F < 100赫兹) 与预期趋势相比大幅下降。当振荡器工作在 10Hz 偏移时，相位噪声改善约 10dB，1Hz 偏移时相位噪声改善约 25dB。 ${T} _{to}$ 与室温相比。[2020-0206]